李琛

摘 要：光伏產业对高效率和低成本太阳能电池的需求促进了太阳能电池制造工艺的不断优化。在制造过程中，控制硅晶片尺寸和硅中杂质浓度的需求变得越来越重要。目前，太阳能电池的标准化生产线包括采用柴可拉斯基工艺制作硅锭，将硅锭切块，晶圆切片，纹理化，发射极扩散，边缘隔离，抗反射涂层，丝网印刷，退火以及最终测试。该生产线的每个步骤都可以分别进行优化，以提高太阳能电池的效率。文中主要研究n型接触极钝化多晶硅太阳能电池的硼扩散过程，研究扩散曲线对太阳能电池效率的影响。首先，使用EDNA2进行仿真模拟以确定重掺杂区的参数，进而使用Quokka软件进行进一步模拟，从而获得光伏参数开路电压（VOC）和填充因数（FF），并确定最佳扩散温度和时间，为后续的实验节省大量时间并提供指导方案。通过对扩散温度和氧化时间的分析，优化扩散过程中的相关参数，提高太阳能电池的性能。最终将实验结果与模拟结果相对应，判断工艺优化是否有效，符合预期结果。

关键词：硼扩散温度;氧化时间;EDNA 2;Quokka;光电转化效率;

中图分类号：TB 321

文献标志码：A

文章编号：1672-9315（2020）02-0298-06

DOI：10.13800/j.cnki.xakjdxxb.2020.0215开放科学（资源服务）标识码（OSID）：

Optimization ofboron diffusion in n-type

polysilicon passivated contact solar cells

LI Chen，Udo R-mer，Alison Lennon

（The University of New South Wales，Sydney 2052，Australia）

Abstract：The demand for the higher-efficiency and lower-cost solar cells in PV industry promotes the optimisation of the manufacturing process of solar cells continuously.The need for controlling the silicon wafer size and the concentration of impurities in the silicon is increasingly important in manufacturing processes.Currently，the standardised manufacturing line of solar cells includes growing silicon ingot with Czochralski（CZ）process，sawing the silicon ingot into bricks，wafer slicing，texturing，emitter diffusion，edge isolation，anti-reflection coating，screen printing，co-firing and testing at the end.Each step in this production line can be optimised separately to improve the efficiency of solar cells.This thesisfocuses on the boron diffusion process in n-type doped polysilicon passivated contact solar cells to investigate the impact of diffusion profile on solar cellsefficiency，with four objectives addressed.First，perform simulations of EDNA2 to determine the recombination in the heavily doped region and Quokka to obtain the photovoltaic parameters open-circuit voltage（VOC）and Fill factore（FF），respectively.Reproducing previous simulations can significantly reduce the experimental time and provide a guideline for optimising boron diffusion.Second，identify the effects of drive-in temperature in the boron diffusion process，followed by the impact of post-diffusion oxidation time，

which attempts to

optimise relevant parameters during the diffusion process，thereby improving solar cellsperformance.

What has been done previously is possible to compare

the emitter recombination results with the calculation values，an important step to check if the optimisation of the diffusion process effective.

Key words：boron diffusion temperature;oxidation time;EDNA2;Quokka;solar cell efficiency

在太阳能电池的标准生产线中，扩散是重要的一步，因为掺杂杂质形成P-N结将有效的改善半导体的电性能。例如，将硼掺杂到硅中可以形成n型硅晶片，第III族元素具有3个价电子，这些元素可以接受一个电子形成具有稳定结构的硅晶格。具体来说，硼掺杂到硅中后，只需约0.02 eV的能量即可获得电子，并在室温条件下轻松使其完全电离[1-2]。……