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存储测试系统中FLASH的存储可靠性技术研究

2017-09-25高阳王代华王晓楠

现代电子技术 2017年18期

高阳+王代华+王晓楠

摘 要: NAND FLASH存储器具有非易失性、存储容量大和读写速度快等优点,在存储测试领域的应用越来越广泛。由于NAND FLASH存储器中不可避免会出现无效块,传统的管理方法是将无效块映射表存放在FLASH存储器中,可靠性低,对数据存储速度和可靠性都会造成不利影响。针对这些问题,提出了基于外置存储数据位的无效块快速检索架构,将无效块映射表存放在可靠性高的铁电存储器中;引入计算机网络中的滑动窗口原理,建立了基于滑动窗口的无效块预匹配机制,在不影响FLASH存取速度的情况下可无时延地生成有效块地址。经分析和论证,这种架构对NAND FLASH存储数据的可靠性和存取速度有很大的提升,提高了存储测试系统的整体性能。

关键词: NAND FLASH; 无效块管理; 存储测试; 铁电存储器

中图分类号: TN911?34; TM932 文献标识码: A 文章编号: 1004?373X(2017)18?0131?04

Research on stored reliability technology of FLASH in storage testing system

GAO Yang, WANG Daihua, WANG Xiaonan

(MOE Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Taiyuan 030051, China)

Abstract: The NAND FLASH has versatile features such as nonvolatile, large storage capacity and fast read?write speed, and is widely used in the field of stored measurement, but the low reliability of the invalid block mapping table has a bad influence on storage speed and reliability because invalid blocks may ineluctably appear in NAND FLASH memory and the traditional invalid block management methods put the table in the FLASH memory. For these problems, invalid block information fast retrieval architecture based on external storage data bits is proposed, with which the invalid block mapping table can be put in high?reliability FRAM. The sliding window principle is imported into computer network to establish an invalid block pre?matching mechanism based on the sliding window, by which the effective block address can be generated without delay while FLASH storage access speed does not be affected. The analysis and argument results indicate this architecture can improve the reliability and access speed of NAND FLASH stored data greatly, and the overall performance of storage testing system.

Keywords: NAND FLASH; invalid block management; storage testing; FRAM

存儲测试特指在恶劣环境和紧凑空间下完成的高可靠性动态参数测试,用于实时、高速地采集和记录被测对象的数据信息[1?3]。随着采集数据精度的提高以及记录时间的延长,需要存储的数据量急剧增大。同时,存储测试设备大多数情况下工作在极为恶劣的环境中,强烈的冲击、持续的高温以及设备碰撞时产生的高幅值的应力波可能会引起设备内部电路板的破坏、电子元件的变形等,这些现象都会造成数据存储模块功能的失效,导致数据不能正常回读[4]。NAND FLASH存储器具有功耗低、无噪声、重量轻、体积小、抗振动能力强、工作温度范围宽等优点,广泛地应用在高性能的存储测试系统中[5?6]。……

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