钟志有, 陆　轴, 龙　路, 康　淮

(中南民族大学 电子信息工程学院, 智能无线通信湖北省重点实验室, 武汉 430074)



镓锌氧化物半导体薄膜的晶粒生长特性及其微结构研究

钟志有, 陆轴, 龙路, 康淮

(中南民族大学 电子信息工程学院, 智能无线通信湖北省重点实验室, 武汉 430074)

摘要采用ZnO:Ga3O2高密度陶瓷靶作为溅射源材料，利用射频磁控溅射技术在玻璃基片上制备了镓锌氧化物(GaZnO)半导体薄膜.基于X射线衍射仪的测试表征，研究了薄膜厚度对GaZnO样品晶粒生长特性和微结构性能的影响.研究结果表明：所制备的GaZnO样品为多晶薄膜，并且都具有六角纤锌矿型结构和(002)晶向的择优取向生长特性；其(002)取向程度、结晶性能和微结构参数等均与薄膜厚度密切相关.随着薄膜厚度的增大，GaZnO样品的(002)择优取向程度和晶粒尺寸表现为先增大后减小，而位错密度和晶格应变则表现为先减小后增大.当薄膜厚度为510 nm时，GaZnO样品具有最大的(002)晶向织构系数(2.959)、最大的晶粒尺寸(97.8 nm)、最小的位错密度(1.044×10(14) m(-2))和最小的晶格应变(5.887×10(-4)).

关键词磁控溅射；氧化锌薄膜；晶粒生长；微结构

Grain Growth and Microstructure of Gallium-Zinc Oxide Semiconductor Thin Films

ZhongZhiyou,LuZhou,LongLu,KangHuai

(Hubei Key Laboratory of Intelligent Wireless Communications, College of Electronic Information Engineering,South-Central University for Nationalities, Wuhan 430074, China)

AbstractThe gallium-zinc oxide (GaZnO) semiconductor thin films were deposited on glass substrates by radio-frequency magnetron sputtering technique using the ceramic target fabricated by sintering the mixture of ZnO and Ga2O3nanometer powder. The influence of thickness on grain growth characteristics and microstructure of the deposited films was investigated by X-ray diffractometer. The results show that the deposited thin films with the hexagonal crystal structure are polycrystalline and have a strongly preferred orientation of (002) plane. The grain growth and mirostructure properties of the thin films are closely related to the thickness. As the thickness increases, the texture coefficient of (002) plane and grain size firstly increase and then decrease, while the dislocation density and lattice strain exhibit the reverse variation trend. The GaZnO thin film with the thickness of 510 nm possesses the best crystallite quality and microstructural properties, with the highest texture coefficient of (002) plane (2.959), the largest grain size (97.8 nm), the smallest dislocation density (1.044×1014m-2) and the minimum lattice strain (5.887×10-4).

Keywordsmagnetron sputtering; zinc oxide thin films; grain growth; microstructure

由于具有独特的光学和电学性能，氧化物透明半导体薄膜被广泛应用于光伏太阳能电池(PSC)[1-6]、发光二极管(LED)[7-12]、液晶显示器(LCD)[13-16]、薄膜晶体管(TFT)[17,18]、气体传感器[19-21]和触控面板[22]等光电子领域，其中掺锡氧化铟(ITO)是其家族中最为重要和最具有代表性的成员之一.在PSC和LED等光电子器件中，ITO薄膜是目前普遍使用的透明电极材料，但是由于ITO的主要成份铟(In)为稀有……