王兴萍 李毅 庄嘉庆 闫俊屹 梅金城

摘要：利用溶胶–凝胶旋涂法和后退火工艺在FTO 导电玻璃上制备了钨镍共掺杂 V2O5薄膜，研究了薄膜在不同温度和不同偏压下的光电特性和相变特性。利用 X射线衍射仪（XRD）、扫描电子显微镜（SEM）和 X 射线光电子能谱仪（XPS）测试了钨镍共掺杂 V2O5薄膜的晶体结构、表面形貌和组分，分析了不同钨镍共掺杂浓度对 V2O5薄膜相变光电特性的影响。结果表明，当钨和镍的掺杂质量分数分别为3%和1.5%时，钨镍共掺杂的 V2O5薄膜的相变温度为218.5℃， 在可见光范围内有较高的透过率，在近红外1310 nm 波长处的光学透过率达48.83%，与未掺杂 V2O5薄膜的光学透过率相比提高了10.29%，薄膜电阻降低了30.53%，热致回线宽度收窄为15℃， 说明钨镍共掺杂的 V2O5薄膜具有良好的可逆相变光电特性，有望在新型光电器件领域得到较好的应用。

关键词：钨镍共掺杂；V2O5薄膜；溶胶–凝胶；热致相变；光学透过率；薄膜电阻

中图分类号： TO 484.4/TO 484.5 文献标志码： A

Preparation of tungsten-nickel co-doped V2O5 films by sol-gelmethod and photoelectric properties of thermally inducedphase transition

WANG Xingping1，LI Yi1，2，ZHUANG Jiaqing1，YAN Junyi1，MEI Jincheng1

（1. School of Optical-Electrical and Computer Engineering， University of Shanghai forScience and Technology， Shanghai 200093， China;

2. Shanghai Key Laboratory of Modern Optical Systems， University of Shanghai forScience and Technology， Shanghai 200093， China）

Abstract： In this paper， tungsten-nickel co-doped V2O5 films were prepared on FTO conductive glass by using sol-gel spin coating and annealing to study their photoelectric and phase transition propertiesatdifferenttemperaturesanddifferentbiasvoltage. Thecrystalstructure，surface morphology and components of tungsten-nickel co-doping V2O5 films were tested by XRD， SEM and XPS to analyze the effects of different tungsten-nickel co-doping concentrations on the phase transitionphotoelectricpropertiesofV2O5films. Theresultsshowthatwhenthedopingconcentrations of tungstenand nickel were respectively 3% and 1.5%， tungsten-nickel co-doped V2O5 films had a phase transition temperature of 218.5℃， a higher transmittance in the visible light range and the transmittance of 48.83% at 1310 nm wavelength. Comparing with the undoped V2O5 films， the optical transmittance and sheet resistance of the co-doped V2O5 films increased 10.29% anddecreased 30.53%，respectively，andthethermalhysteresisloopwidthwasalso narrowed to 15 ℃. It is expected to have better applications in the field of new optoelectronic devices based on their excellent reversible phase transition photoelectric properties.

Keywords： codopingof tungstenand nickel; V2O5 film; sol-gel; thermotropic phase transition; optical transmittance; sheet resistance

引言

钒氧化物的氧化态从 V2+到 V5+，其中 V2O5 是钒化学价态最高的氧化物，常见的有α-V2O5，另外还有其同质异型体β-V2O5、γ-V2O5、ω-V2O5 以及 MxV2O5钒青铜[1]，它们具有层状结构，在室温下是 n 型半导体，具有正交晶体结构[2-3]，能同时注入电子和离子，具有良好的相变可逆性和长周期循环稳定性[1]。此外，它们还具有宽的带隙（2.2～2.4 eV）、高吸收系数、热稳定性[3]，当温度达到257℃左右时，可由半导体态转变为金属态[4]。因其独特的结构及其在电学、光学、物理化学和离子导电性等方面具有的优良性能，其在光电器件[5]、锂离子电池[6]、电致变色显示器件[7]、气敏传感器[8]、超级电容器[9]等方面具有广阔的应用前景。……