傅海鹏　孙辉

摘   要：基于55 nm CMOS工艺提出了一款具有高输出功率的太赫兹基波压控振荡器（Voltage-Controlled Oscillator，VCO）. 设计采用堆叠结构来克服单个晶体管供电电压受限导致输出摆幅较低的问题来有效提高了输出功率. 依据单边化技术在核心晶体管的栅漏之间嵌入自馈线来调整栅漏之间的相移和增益以最大化晶体管在期望频率下的可用增益，从而提高晶体管的功率输出潜力. 提取版图寄生后的仿真结果表明：在2.4 V供电电压下，VCO的输出频率范围为200.5 GHz～204.4 GHz，电路峰值输出功率为3.25 dBm，在1 MHz的频偏处最优相位噪声为-98.7 dBc/Hz，最大效率为8.1%. 包括焊盘在内的版图面积仅为0.18 mm2. 此次工作实现了高输出功率并具有紧凑的面积，为高功率太赫兹频率基波VCO设计提供了一种设计思路.

关键词：太赫兹;压控振荡器;高功率;高效率

中图分类号：TN752                               文献标志码：A

Design of Terahertz Fundamental Wave Voltage-controlled

Oscillator with High Output Power

FU Haipeng SUN Hui

（School of Microelectronics，Tianjin University，Tianjin 300072，China）

Abstract：A terahertz fundamental Voltage-Controlled Oscillator（VCO） with high output power in 55 nm CMOS process is proposed in this paper. The stacked structure is adopted to solve the problem of low output swing caused by the limited supply voltage of a single transistor，thereby effectively increasing the output power. Based on the unilateralization technique，a self-feeding line is embedded between the gate and drain of the core transistor to adjust the phase shift and gain in order to maximize the available gain of the transistor at the desired frequency，thereby increasing the power output potential of the transistor. The simulation results after extracting the parasitic parameters of the layout show that，under a supply voltage of 2.4 V，the output frequency of this VCO ranges from 200.5 GHz to 204.4 GHz，the peak output power of the circuit is 3.25 dBm，the minimum phase noise is -98.7 dBc/Hz at the frequency deviation of 1 MHz，and the maximum efficiency of the circuit is 8.1%. The layout area including the pad is only 0.18 mm2. This work achieves high output power with a compact area and provides a design mentality for the realization of high-power terahertz fundamental VCOs.

Key words：terahertz;Voltage-Controlled Oscillator（VCO）;high power;high efficiency

太赫茲频段具有穿透性、安全性、宽带性等独特优点，因此在无线通信、公共安全检测、成像等领域具有十分广阔的应用场景[1]. 而上述应用均需要具有较高输出功率的太赫兹振荡器. 但是由于太赫兹频率已接近硅基晶体管的最高振荡频率fmax，晶体管的可用增益会急剧下降，此外，在如此高的频率下，无源器件受趋肤效应、寄生等影响产生的损耗更加显著，这些因素使得基于硅基工艺的晶体管输出功率有限. 尽管使用Ⅲ-Ⅴ 族化合物半导体工艺可以使太赫兹频段的振荡器设计实现较优的性能[2-3]，但是高昂的工艺成本令其目前无法大规模应用……