许慧 王艳洁 刘小敏

【摘 要】为了评估宇航用VDMOS的电参数及抗辐射性能，本文提出一个新的宇航用VDMOS参数测量系统。在虚拟仪器架构上开发自动测量程序及设计测量夹具，引入高DC偏置电容测量与多路复用开关技术，构建出一套多模式全自动切换、高精度、快速参数测量系统。使用本系统对自主研发的一款应用于宇航电子继电器的高压大功率VDMOS开关管芯片的电参数和抗辐射性能进行实测分析。分析了芯片的传输特性、阈值电压、寄生电容等特征参数在总剂量辐照前后偏差。讨论了管芯栅氧厚度与总剂量辐照参数偏移量的关系，以及抗单粒子辐照极限工作电压值。测试结果表明该VDMOS芯片性能良好，为后续的改进及实际应用提供了依据，同时该测试系统具备高效率，高测量精度等优点。

【关键词】VDMOS；自动测试系统；电参数；单粒子效应

中图分类号： TP274.4 文献标识码： A 文章编号： 2095-2457（2018）01-0039-004

【Abstract】In order to evaluate the electrical characteristics and radiation tolerance of VDMOS applied in aerospace， a new automatic test system was designed. Automatic measurement program and test setup are developed based on Virtual instrument framework， and by introducing techniques of the high DC bias capacitance measurement and the multiplex switch， a set of measurement system with high accuracy and speed， which be able to automatically switch among multi-modes is constructed. Using this test system， a self-developed high voltage power VDMOS， applied in electronic relay for aerospace applications are tested and analyzed. The test and analyze parameters include radiation tolerance and electrical parameters. The deviation of the electrical characteristics before and after radiation experiments has been analyzed， including transfer characteristics， threshold voltage， and parasitic capacitance. The relationship between the gate oxide thickness and TID effects and anti-single particle irradiation limit operating voltage has also been discussed. The experiment results have shown the VDMOS chip performed well and pave the way for further performance improvements and practical applications. At the same time， this test system can acquire the performance data effectively with great accuracy.

【Key words】VDMOS； Automatic test system； Electrical characteristics； Single event effects

VDMOS（Vertical Double-diffused MOSFET）具有快速開关、低功耗、高度线性跨导、良好的频率特性等特点，广泛应用于航天电源系统的控制与调节。然而，VDMOS在太空实际工作时会受到宇宙射线、高能粒子的影响，容易导致VDMOS电参数恶化，如单粒子栅穿SEGR（Single Event Gate Rupture）与单粒子烧毁SEB（Single Event Burnout），甚至功能失效[1-3]。因此，宇航用VDMOS要求在使用时具备极高的可靠性。

为了评估VDMOS的电参数及抗辐射性能研发人员设计了大量的测试系统。文献[4]提出了一种以单片机为核心的参数测试仪，简单且易于实现，能满足一般的测量需求，可由于使用互感元件使得自身干扰极大，系统稳定性差且可测量不全；……