巩合春 赵洪涛 任广义 代海洋

中图分类号：O469文献标识码：ADOI：10.3969/j.issn.2096-1553.2019.02.007

文章编号：2096-1553（2019）02-0050-06

关键词：Ce掺杂;ZnO纳米材料;光学特性;纳米器件组装

Key words：Ce-doped;ZnO nanomaterial;optical property;nanodevice assembly

摘要：采用溶胶-凝胶和化学气相沉积相结合的方法，制备一种Ce掺杂ZnO纳米材料，对其结构、形貌、能带结构和发光特性等进行分析，结果表明：该纳米材料形状类似螺丝刀，由六方微米基底和纳米棒顶两部分组成，具有很好的单晶结构;其制备过程符合VLS生长机制，且Zn和Ce蒸气浓度对各个晶面的生长速度有非常大的影响;与纯ZnO纳米材料相比，该纳米材料中的Zn 2p3/2峰向低能级转移，而O1s峰向高能级转移，Ce的掺杂影响了ZnO的电子结构和带隙结构;其紫外发射峰强度降低并伴有红移，且绿光发射强度得到提高.该方法制备的纳米材料，在组装纳米器件方面有很好的应用前景.

Abstract：A Ce-doped ZnO nanomaterial was prepared by a simple method of sol-gel and chemical vapor deposition. The structure， morphology， band structure and luminescence properties of the ZnO nanomaterials were analyzed. The results showed that the nanomaterial was similar to a screwdriver，and consisted of a hexagonal micron substrate and a nanorod top. It had a good single crystal structure; its preparation process conformed to the VLS growth mechanism， and the vapor concentrations of Zn and Ce had a very large influence on the growth rate of each crystal face; Compared with ZnO nanomaterials， the Zn 2p3/2 peak in the nanomaterials shifted to a lower energy level， while the O1s peak shifted to a higher energy level. The doping of Ce affected the electronic structure and band gap structure of ZnO;its UV emission peak was reduced and accompanied by red shift， and the intensity of green light emission was improved. The nanomaterial prepared has a good application prospect in assembling nanodevices.

0 前言

纳米材料由于具有独特的物理化学性能，被广泛应用于光电器件、传感器、 催化剂和复合材料等方面.Ⅱ—Ⅵ族直接带隙宽禁带半导体氧化物ZnO具有较高的化学稳定性，其禁带宽度为3.37 eV ，激子结合能为0.06 eV，可以用作可见光和紫外光发射材料.因此，ZnO纳米材料的制备及其物理化学特性的研究，引起了众多学者的关注.目前，制备ZnO纳米材料的方法有很多，常见的方法有化学气相沉积法、金属有机化学气相沉积法、 脉冲激光沉积法、 溶胶-凝胶模板法和湿化学法等[1]，包括纳米线、纳米棒、纳米带、纳米管等在内的多种类型的ZnO纳米材料已被成功地制备出来[2-4]，并组装成多种纳米器件[5-7].为……