气相法制备ZnO纳米阵列研究进展*
2016-01-27党威武张永军徐秀娟
党威武,张永军,徐秀娟,李 燕
(1 陕西国防工业职业技术学院机械工程学院,陕西西安 710300;
2 西安交通大学材料科学与工程学院,陕西西安 710049)
气相法制备ZnO纳米阵列研究进展*
党威武1,张永军1,徐秀娟1,李燕2
(1 陕西国防工业职业技术学院机械工程学院,陕西西安 710300;
2 西安交通大学材料科学与工程学院,陕西西安 710049)
摘要:ZnO作为一种具有优良性质的半导体材料,其纳米结构的制备方法得到广泛研究。气相法制备ZnO纳米阵列具有产物容易阵列及收集方便等特点,就近些年来ZnO纳米阵列的气相制备法研究情况做一总结和归纳,主要有化学气相沉积法、物理气相沉积法、金属有机物化学气相沉积法、化学气相输运法及脉冲激光沉积法等,并对不同实验方法合成的ZnO纳米阵列形貌结构及生长环境进行分析讨论,简单探讨气-液-固和气-固生长机理,为探索简单、方便,产物形貌结构及尺寸大小可控性强的气相制备方法提供依据。
*基金项目: 陕西国防工业职业技术学院2015年科研基金资助项目(项目编号:Gfy15-01)
关键词:ZnO,制备,纳米阵列
中图分类号:TQ 132.4
Abstract:ZnO is a kind of semiconductor material with excellent properties,the preparation method of its nanostructure is widely studied. There are many characteristics for preparing ZnO nanostructure arrays by vapor phase method,as easy array and convenient collection and so on. In this paper,the summary and induction have been made about study situation of vapor phase method with preparing ZnO nanostructure arrays,mainly including chemical vapor deposition,physical vapor deposition,metal organic chemical vapor deposition,chemical vapor transport and pulsed laser deposition and so on,and the morphology structure and growth environment of the prepared ZnO nanostructure arrays were analyzed and discussed applying the different experimental methods,the growth mechanism of gas-liquid-solid and gas-solid was simply discussed,with providing the basis for exploring a simple,convenient,strong controllability of product’s morphology and structure vapor phase method.
Research Progress of ZnO Nanostructure Arrays Prepared by Vapor Phase Method
DANG Wei-wu1,ZHANG Yong-jun1,XU Xiu-juan1,LI Yan2
(1 College of Mechanics,Shaanxi Institute of Technology,Xi’an 710300,Shaanxi,China;2 School
of Materials Science & Engineering,Xi’an JiaoTong University,Xi’an 710049,Shaanxi,China)
Key words: ZnO,preparation,nanostructure arrays
ZnO作为一种n型直接带隙半导体材料,具有化学性质稳定、光透过率高、介电常数低及光电、压电特性优异等特点,是继GaN之后又一重要的光电材料,被广泛应用于太阳电池、发光二极管等领域[1-2],前景十分广阔[3]。
ZnO纳米阵列由于其优良的性能和独特的形貌,基于它的各种器件不断得到研制与开发,如太阳电池、发光二极管、室温激光器、传感器、场发射器、晶体管等,具有相当大的应用价值。……
