RESEARCH HlGHLlGHTS

1. 2D black arsenic phosphorous
2. Recent progress and future prospects of high-entropy materials for battery applications

REVlEWS

1. Development of in situ characterization techniques in molecular beam epitaxy

ARTlCLES

1. Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition
2. 975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings
3. P hysical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
4. A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
5. E mission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
6. Behavior of exciton in direct-indirect band gap AlxGa1-xAs crystal lattice quantum wells
7. G Hz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits
8. Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p-n heterostructures with a fast response speed and high normalized detectivity