ARTlCLES

1. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate
2. Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy
3. Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights
4. E nhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-yFexNiySb
5. 240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect
6. A 24-30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS
7. Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance
8. Bidirectional rectifier with gate voltage control based on Bi2O2Se/WSe2 heterojunction

REVlEWS

1. GaN based ultraviolet laser diodes

SHORT COMMUNlCATlON

1. Effect of drying methods on perovskite films and solar cells