目录
- Heavily doped silicon:A potential replacement of conventional plasmonic metals
- 3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications
- Determination of trap density-of-states distribution of nitrogendoped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
- L ow-bandgap Sn–Pb perovskite solar cells
- Dithieno[3',2':3,4;2'',3'':5,6]benzo[1,2-c][1,2,5]oxadiazole-based polymer donors with deep HOMO levels
- Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
- 18.69% PCE from organic solar cells
- GIWAXS:A powerful tool for perovskite photovoltaics
- Magnetic quantum oscillation in a monolayer insulator
- A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance
- Oscillation neuron based on a low-variability threshold switching device for high-performance neuromorphic computing
- A review of manufacturing technologies for silicon carbide superjunction devices
- Modeling the photon counting and photoelectron counting characteristics of quanta image sensors